型号:

HSG1002VE-TL-E

RoHS:无铅 / 符合
制造商:Renesas Electronics America描述:IC AMP HBT SIGE 38GHZ MFPAK-4
详细参数
数值
产品分类 分离式半导体产品 >> RF 晶体管 (BJT)
标准包装 10,000
系列 -
晶体管类型 NPN
电压 - 集电极发射极击穿(最大) 3.5V
频率 - 转换 38GHz
噪声系数(dB典型值@频率) 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
增益 8dB ~ 19.5dB
功率 - 最大 200mW
在某 Ic、Vce 时的最小直流电流增益 (hFE) 100 @ 5mA,2V
电流 - 集电极 (Ic)(最大) 35mA
安装类型 表面贴装
封装/外壳 4-SMD,鸥翼型
供应商设备封装 4-MFPAK
包装 带卷 (TR)
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